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| BSP613P SIPMOS (R) Small-Signal-Transistor Feature * P-Channel * Enhancement mode * Avalanche rated * dv/dt rated * Ideal for fast switching buck converter Product Summary VDS RDS(on) ID -60 0.13 -2.9 SOT-223 V A Drain pin 2,4 Type BSP613P Package SOT-223 Ordering Code Q67040-S4190 Gate pin1 Source pin 3 Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current TA=25C TA=70C Symbol ID Value -2.9 -2.3 -11.6 150 0.18 6 20 1.8 -55... +150 55/150/56 Unit A Pulsed drain current TA=25C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg Avalanche energy, single pulse ID=2.9 A , V DD=-25V, RGS=25 mJ Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS=2.9A, VDS=-48V, di/dt=-200A/s, T jmax=150C kV/s V W C Gate source voltage Power dissipation TA=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2004-06-02 BSP613P Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) Symbol min. RthJS RthJA RthJA - Values typ. 100 max. 19 100 70 Unit K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0, I D=-250A Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) -60 -2.1 Values typ. -3 max. -4 Unit V Gate threshold voltage, VGS = V DS ID=-1mA Zero gate voltage drain current V DS=-60V, VGS=0, Tj=25C V DS=-60V, VGS=0, Tj=125C A -0.1 -10 -10 0.11 -1 -100 -100 0.13 nA Gate-source leakage current V GS=-20V, VDS=0 Drain-source on-state resistance V GS=-10V, I D=2.9A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2004-06-02 BSP613P Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time g fs Ciss Coss Crss td(on) tr td(off) tf V DD=-30V, VGS=-10V, ID=2.9A, RG=2.7 |VDS|2*|I D|*RDS(on)max , ID=2.9A V GS=0, V DS=-25V, f=1MHz Symbol Conditions min. 2.7 - Values typ. 5.4 715 230 90 6.7 9 26 7 max. 875 295 120 17 18 52 19 Unit S pF ns Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr V GS=0V, |I F| = |I S| V R=-30V, |IF| = |I S|, di F/dt=100A/s Qgs Qgd Qg V DD=-48V, I D=2.9A - 2.5 8.9 22 -3.9 3.8 14.3 33 - nC V DD=-48V, I D=2.9A, V GS=0 to -10V V(plateau) V DD=-48V, I D=2.9A V IS TA=25C - -0.8 37.2 59.8 -2.9 -11.6 -1.1 79 112 A V ns nC Page 3 2004-06-02 BSP613P 1 Power Dissipation Ptot = f (TA) 1.9 BSP613P 2 Drain current ID = f (TA) parameter: VGS 10 V 3.2 BSP613P W A 1.6 1.4 2.4 P tot ID C 1.2 1 0.8 2 1.6 1.2 0.6 0.8 0.4 0.2 0 0 20 40 60 80 100 120 0.4 0 160 0 20 40 60 80 100 120 C 160 TA TA 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 C 10 2 BSP613P 4 Transient thermal impedance ZthJC = f(tp) parameter: D = t p / T K/W 10 2 BSP613P A 10 /ID t = 100.0 p 1 10 1 = VD S 10 1 ms 0 ID R ) (on DS Z thJC 10 -1 10 0 10 ms 10 -2 D = 0.50 0.20 0.10 10 -1 10 -3 0.05 single pulse 0.02 0.01 10 DC 10 -2 -1 0 1 2 -4 10 -5 -10 -10 -10 V -10 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2004-06-02 BSP613P 5 Typ. output characteristic ID = f (VDS) parameter: Tj =25C 7 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS; Tj = 25 C 0.5 A Vgs = 5V 0.4 6 R DS(on) 5.5 5 Vgs = 10V Vgs = 4.5V Vgs = 6V Vgs = 4V Vgs = 4,5V 0.35 0.3 0.25 Vgs = 5V -I D 4.5 4 3.5 3 2.5 0.2 Vgs = 4V 2 1.5 1 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 Vgs=3.5V 0.15 0.1 0.05 0 0 1 2 3 4 Vgs = 6V Vgs = 10V V5 -VDS A -ID 6 7 Typ. transfer characteristics ID= f ( VGS ); |VDS| 2 x |I D| x RDS(on)max parameter: Tj = 25 C 8 8 Typ. forward transconductance g fs = f(I D) parameter: Tj = 25 C 8 A S 6 6 5 gfs 7 V -VGS ID 5 4 4 3 3 2 2 1 1 0 0 1 2 3 4 5 0 0 1 2 3 4 5 6 7 8 A -ID 10 Page 5 2004-06-02 BSP613P 9 Drain-source on-state resistance 10 Gate threshold voltage RDS(on) = f (Tj) parameter : I D = -2.9 A, V GS = -10 V BSP613P VGS(th) = f (Tj) parameter: VGS = VDS , ID = -1 mA -5.0 W RDS(on) 0.34 V -4.0 98% 0.28 0.24 VGS(th) -3.5 typ 0.20 -3.0 -2.5 -2.0 -1.5 2% 0.16 0.12 98% typ 0.08 -1.0 0.04 0.00 -60 -0.5 0.0 -60 -20 20 60 100 C 180 -20 20 60 100 C 180 Tj Tj 11 Typ. capacitances 12 Forward characteristics of reverse diode C = f (VDS) parameter: VGS=0V, f=1 MHz 10 4 IF = f (VSD ) parameter: Tj , tp = 80 s -10 2 BSP613P pF A 10 3 -10 1 C Coss 10 2 IF -10 0 Ciss Crss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 1 0 -5 -10 -15 -20 -25 -30 V -40 -10 -1 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VDS VSD Page 6 2004-06-02 BSP613P 13 Typ. avalanche energy EAS = f (T j) par.: ID = 2.9 A , V DD = -25 V, RGS = 25 160 16 V BSP613P 14 Typ. gate charge VGS = f (QG), parameter: VDS ; Tj = 25 C ID = 2.9 A pulsed; mJ 120 12 100 V GS E AS 10 0.2 VDS max 80 8 0.8 VDS max 60 6 40 4 20 2 0 25 45 65 85 105 125 C 0 165 0 4 8 12 16 20 24 28 nC 34 Tj |QG | 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) BSP613P -72 V V(BR)DSS -68 -66 -64 -62 -60 -58 -56 -54 -60 -20 20 60 100 C 180 Tj Page 7 2004-06-02 BSP613P Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2004-06-02 |
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